IRFSL4127PbF Datasheet - International Rectifier

IRFSL4127PbF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET® Power MOSFET D VDSS 200V :RDS(on) typ. 18.6m max. 22m: S ID 72A DD S G D2Pak IRFS4127PbF S D G.

IRFSL4127PbF Features

* uation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junc

IRFSL4127PbF Datasheet (352.49 KB)