IRFZ34N
International Rectifier
188.21kb
Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resist
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IRFZ34 - Power MOSFET
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♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.
IRFZ34 - N-Channel Power MOSFET
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PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qg.
IRFZ34A - Power MOSFET
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$GYDQFHG 3RZHU 026)(7
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♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.
IRFZ34A - Power MOSFET
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IRFZ34E - Power MOSFET
(International Rectifier)
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Ease of Parall.
IRFZ34EPBF - Power MOSFET
(International Rectifier)
l Advanced Process Technology
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IRFZ34L - Power MOSFET
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PD - 9.892A
IRFZ34S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Op.
IRFZ34L - Power MOSFET
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IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
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PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
