IRFZ34N Datasheet - International Rectifier

Power MOSFET

IRFZ34N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRFZ34N Datasheet (188.21 KB)

IRFZ34N Datasheet Preview — Preview of IRFZ34N PDF

Datasheet Details

Part number:

IRFZ34N

Manufacturer:

International Rectifier

File Size:

188.21 KB

Description:

Power mosfet.
PD - 94807 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Le.

📁 Related Datasheet

IRFZ34 Power MOSFET (Fairchild Semiconductor)

IRFZ34 N-Channel Power MOSFET (Samsung Electronics)

IRFZ34 Power MOSFET (International Rectifier)

IRFZ34 Power MOSFET (Vishay)

IRFZ34A Power MOSFET (Fairchild Semiconductor)

IRFZ34A Power MOSFET (Samsung Electronics)

IRFZ34E Power MOSFET (International Rectifier)

IRFZ34EPBF Power MOSFET (International Rectifier)

IRFZ34L Power MOSFET (International Rectifier)

IRFZ34L Power MOSFET (Vishay)

TAGS

IRFZ34N Power MOSFET International Rectifier

Image Gallery

IRFZ34N General Description

Datasheet Details

File Size:

Description:

IRFZ34N Distributor