IRFZ34S Datasheet - International Rectifier

Power MOSFET

IRFZ34S General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFZ34S Datasheet (305.44 KB)

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IRFZ34S

Manufacturer:

International Rectifier

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305.44 KB

Description:

Power mosfet.
PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Op.

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IRFZ34S Power MOSFET International Rectifier

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IRFZ34S General Description

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