Datasheet4U Logo Datasheet4U.com

IRFZ44E - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y LOT CO DE 9B1M A IN TE R N A T IO N A L R E C T IF IE R LO GO.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ44E N-Channel MOSFET INCHANGE
IRFZ44ES N-Channel MOSFET INCHANGE
IRFZ44 Power MOSFET Fairchild
IRFZ44 Power MOSFET Vishay
IRFZ44 N-Channel Trench Power MOSFET Thinki Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ44EL Power MOSFET
IRFZ44ELPBF Power MOSFET
IRFZ44EPBF Power MOSFET
IRFZ44ES Power MOSFET
IRFZ44ESPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 91671B IRFZ44E HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.023Ω G S ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Published: |