Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- 14 (.045) 5.08 (.200)
0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M B A M
0.55 (.022) 0.46 (.018)
1.39 (.055) 1.14 (.045)
M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.450)
N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - S.
IRFZ44ES_InternationalRectifier.pdf
