IRFZ44VPbF

Power MOSFET

International Rectifier

IRFZ44VPbF General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRFZ44VPbF Datasheet (235.48 KB)

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IRFZ44VPbF

Manufacturer:

International Rectifier

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235.48 KB

Description:

Power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

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IRFZ44VPbF Power MOSFET International Rectifier

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IRFZ44VPbF General Description

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