IRFZ46NLPbF Datasheet - International Rectifier

IRFZ46NLPbF HEXFET Power MOSFET

l l IRFZ46NSPbF IRFZ46NLPbF HEXFET® Power MOSFET D PD - 95158 VDSS = 55V RDS(on) = 0.0165Ω G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching.

IRFZ46NLPbF Features

* VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ46NS/LPbF D2Pak Package Outline D2Pak Part Marking Information (Lead-Free) T H I S IS AN IR F 5 30 S WIT H L OT COD E 8 02 4

IRFZ46NLPbF_InternationalRectifier.pdf