IRG4PC60F-PPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4PC60F-PPBF
Manufacturer	International Rectifier
File Size	257.67 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC60F-PPBF_InternationalRectifier.pdf

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Solder plated version of industry standard TO-247AC package. Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 60A n-channel Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specified.

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Published: Jan 8, 2007 |