IRHF7310SE Datasheet - International Rectifier

IRHF7310SE N-CHANNEL TRANSISTOR

Provisional Data Sheet No. PD-9.1444A REPETITIVE AVALANCHE AND dv/dt RATED IRHF7310SE HEXFET® TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 400 Volt, 4.5Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compe.

IRHF7310SE Features

* s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Dri

IRHF7310SE_InternationalRectifier.pdf