IRHQ9110 Datasheet - International Rectifier

IRHQ9110 RADIATION HARDENED POWER MOSFET

PD - 93794C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ9110 100K Rads (Si) IRHQ93110 300K Rads (Si) RDS(on) 1.1Ω 1.1Ω ID -2.3A -2.3A IRHQ9110 100V, QUAD P-CHANNEL RAD-Hard HEXFET ™ ® MOSFET TECHNOLOGY LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. Th.

IRHQ9110 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings ( Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS =

IRHQ9110 Datasheet (151.17 KB)

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Datasheet Details

Part number:

IRHQ9110

Manufacturer:

International Rectifier

File Size:

151.17 KB

Description:

Radiation hardened power mosfet.

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IRHQ9110 RADIATION HARDENED POWER MOSFET International Rectifier

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