IRHQ9110 Datasheet - International Rectifier

IRHQ9110, RADIATION HARDENED POWER MOSFET

PD - 93794C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ9110 100K Rads (Si) IRHQ93110 300K

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings ( Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS =

Applications

* This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as

IRHQ9110_InternationalRectifier.pdf