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IRHYK57133CMSE RADIATION HARDENED POWER MOSFET

IRHYK57133CMSE Description

PD - 96898 RADIATION HARDENED IRHYK57133CMSE POWER MOSFET 130V, N-CHANNEL 5SURFACE MOUNT (Low-Ohmic TO-257AA)  TECHNOLOGY ™™ Product Summary P.

IRHYK57133CMSE Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID@ VGS = 12V, TC = 100°C

IRHYK57133CMSE Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

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RADIATION HARDENED POWER MOSFET International Rectifier
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