IRHYK57133CMSE Datasheet - International Rectifier

IRHYK57133CMSE RADIATION HARDENED POWER MOSFET

PD - 96898 RADIATION HARDENED IRHYK57133CMSE POWER MOSFET 130V, N-CHANNEL 5SURFACE MOUNT (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level IRHYK57133CMSE 100K Rads (Si) RDS(on) 0.082Ω ID 20A International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) a.

IRHYK57133CMSE Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID@ VGS = 12V, TC = 100°C

IRHYK57133CMSE-InternationalRectifier.pdf