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IRL3215PBF

HEXFET Power MOSFET

IRL3215PBF Features

* IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022) 0.46

IRL3215PBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRL3215PBF Datasheet (177.47 KB)

Preview of IRL3215PBF PDF

Datasheet Details

Part number:

IRL3215PBF

Manufacturer:

International Rectifier

File Size:

177.47 KB

Description:

Hexfet power mosfet.
PD - 95405 IRL3215PbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Te.

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TAGS

IRL3215PBF HEXFET Power MOSFET International Rectifier

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