IRLBA3803 Datasheet - International Rectifier

IRLBA3803 HEXFET Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRLBA3803 Features

* rent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLBA3803 www.datasheet4u.com Super-220 Package Outline Super-220 package is not recommended for Surface Mount Application. Data and specifications subject to ch

IRLBA3803_InternationalRectifier.pdf