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IRLH5030PBF Power MOSFET

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Description

IRLH5030PbF HEXFET® Power MOSFET V DS R DS(on) max (@VGS = 4.5V) 100 9.9 44 1.2 88 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) R G (typical) ID (@Tmb = 25.

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Features

* Low RDSon (≤9.0mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enable b

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