IRLIZ44N Datasheet (International Rectifier)

IRLIZ44N, POWER MOSFET

l l D VDSS = 55V RDS(on) = 0.022Ω G ID = 30A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe

IRLIZ44N Features

* are shown in millimeters (inches) 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.1 23) -A3.7 0 (.145) 3.2 0 (.126) 4.80 (.189 ) 4.60 (.181 ) 2.80 (.110) 2.60 (.102) L EA D AS SIGN M EN T S 1 - GA T E 2 - D R AIN 3 - SO U R C E 7.10 (.280 ) 6.70 (.263 ) 16 .0 0 (.630) 15 .8 0 (.622) 1.15 (.04