IRLML9301TRPBF Datasheet, Mosfet, International Rectifier

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Part number:

IRLML9301TRPBF

Manufacturer:

International Rectifier

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194.39kb

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📄 Datasheet

Description:

Power mosfet.

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IRLML9301TRPBF

International Rectifier

📁 Related Datasheet

IRLML9301 - Power MOSFET (International Rectifier)
VDS VGS Max RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) -30 V ± 20 V 64 mΩ 103 mΩ PD - 96310C IRLML9301TRPbF HEXFET® Power MOSFET G1.

IRLML9303TRPBF - HEXFET Power MOSFET (International Rectifier)
VDS VGS Max RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) -30 ± 20 165 270 V V m m PD - 97519B IRLML9303TRPbF HEXFET® Power MOSFET * ' 6.

IRLML0030PBF-1 - Power MOSFET (International Rectifier)
IRLML0030PbF-1 VDS 30 V HEXFET® Power MOSFET VGS Max ± 20 V G1 RDS(on) max (@VGS = 10V) 27 mΩ 3D RDS(on) max (@VGS = 4.5V) 40 mΩ S2 Micro.

IRLML0030TRPBF - HEXFET Power MOSFET (International Rectifier)
VDS VGS Max RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 30 ± 20 27 40 V V mΩ mΩ PD - 96278B IRLML0030TRPbF HEXFET® Power MOSFET G1 S2 3D M.

IRLML0040TRPBF - HEXFET Power MOSFET (International Rectifier)
VDSS VGS Max RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 56 78 Application(s) • Load/ System Switch • DC Motor Drive V V mΩ mΩ PD -.

IRLML0060 - N-Channel MOSFET (Kexin)
SMD Type ■ Features ● VDS (V) = 60V ● RDS(ON) ＜ 92mΩ (VGS = 10V) ● RDS(ON) ＜ 116mΩ (VGS = 4.5V) TraMnOsiSsFtoErsT N-Channel MOSFET IRLML0060 SOT-23.

IRLML0060TRPbF - Power MOSFET (Infineon)
  VDSS VGS RDS(on) max (@ VGS = 10V) RDS(on) max (@ VGS = 4.5V) 60 ±16 92 116 Applications  Load/System Switch V V m m IRLML0060TRPbF HEX.

IRLML0060TRPBF - HEXFET Power MOSFET (International Rectifier)
.. PD - 97439 IRLML0060TRPbF HEXFET® Power MOSFET VDS VGS Max RDS(on) max (@VGS = 10V) 60 ± 16 92 116 V V mΩ mΩ 6 *   ' Micro.

IRLML0100 - N-Channel MOSFET (Kexin)
SMD Type N-Channel MOSFET IRLML0100 (KRLML0100) MOSFET ■ Features ● VDS (V) = 100V ● ID = 1.6A (VGS = 10V) ● RDS(ON) ＜ 220mΩ (VGS = 10V) ● RDS(ON) .

IRLML0100PBF-1 - Power MOSFET (International Rectifier)
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 100 V 220 mΩ 2.5 nC 1.6 A IRLML0100PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3TM (SOT-23.