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IRLU120N Datasheet - International Rectifier

Power MOSFET

IRLU120N Features

* 0.46 (.018) 4 1.02 (.040) 1.64 (.025) 123 6.22 (.245) 5.97 (.235) 10.42 (.410) 9.40 (.370) 1.52 (.060) 1.15 (.045) 2X 1.14 (.045) 0.76 (.030) -B - 3X 0.89 0.64 (.035) (.025) 0.25 (.010) M AMB 6.45 (.245) 5.68 (.224) 0.51 (.020) M IN. 0.58 (.023) 0.46 (.018) LE A D A S S IG N M E N

IRLU120N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLU120N Datasheet (169.46 KB)

Preview of IRLU120N PDF

Datasheet Details

Part number:

IRLU120N

Manufacturer:

International Rectifier

File Size:

169.46 KB

Description:

Power mosfet.

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IRLU120N Power MOSFET International Rectifier

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