IRLU120N - Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des
IRLU120N Features
* 0.46 (.018) 4 1.02 (.040) 1.64 (.025) 123 6.22 (.245) 5.97 (.235) 10.42 (.410) 9.40 (.370) 1.52 (.060) 1.15 (.045) 2X 1.14 (.045) 0.76 (.030) -B - 3X 0.89 0.64 (.035) (.025) 0.25 (.010) M AMB 6.45 (.245) 5.68 (.224) 0.51 (.020) M IN. 0.58 (.023) 0.46 (.018) LE A D A S S IG N M E N
