IRLU120NPBF Datasheet - International Rectifier

Power MOSFET

IRLU120NPBF Features

* D.U.T.

* ISD controlled by Duty Factor "D"

* D.U.T. - Device Under Test + - VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied

IRLU120NPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLU120NPBF Datasheet (281.25 KB)

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Datasheet Details

Part number:

IRLU120NPBF

Manufacturer:

International Rectifier

File Size:

281.25 KB

Description:

Power mosfet.
IRLR120NPbF IRLU120NPbF l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated .

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IRLU120NPBF Power MOSFET International Rectifier

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IRLU120NPBF Features

IRLU120NPBF General Description

Datasheet Details

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Description:

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