Datasheet4U Logo Datasheet4U.com

IRLU120NPBF Datasheet - International Rectifier

IRLU120NPBF Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLU120NPBF Features

* D.U.T.

* ISD controlled by Duty Factor "D"

* D.U.T. - Device Under Test + - VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied

IRLU120NPBF Datasheet (281.25 KB)

Preview of IRLU120NPBF PDF
IRLU120NPBF Datasheet Preview Page 2 IRLU120NPBF Datasheet Preview Page 3

Datasheet Details

Part number:

IRLU120NPBF

Manufacturer:

International Rectifier

File Size:

281.25 KB

Description:

Power mosfet.

📁 Related Datasheet

IRLU120N Power MOSFET (International Rectifier)

IRLU120N N-Channel MOSFET (INCHANGE)

IRLU120 HEXFET Power MOSFET (International Rectifier)

IRLU120 Power MOSFET (Vishay)

IRLU120PBF POWER MOSFET (International Rectifier)

IRLU110 POWER MOSFET (International Rectifier)

IRLU110 Power MOSFET (Vishay)

IRLU110A Power MOSFET (Fairchild Semiconductor)

TAGS

IRLU120NPBF Power MOSFET International Rectifier

IRLU120NPBF Distributor