IRLZ44N
International Rectifier
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Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resist
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PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qg.
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IRLZ44N， IIRLZ44N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤22mΩ ·Enhancement mo.
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VDS (V) 60
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Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hol.
