Datasheet Details
- Part number
- IRF3710ZGPbF
- Manufacturer
- International Rectifier
- File Size
- 275.05 KB
- Datasheet
- IRF3710ZGPbF-InternationalRectifier.pdf
- Description
- Power MOSFET
IRF3710ZGPbF Description
PD - 96349 .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
IRF3710ZGPbF Applications
* G
IRF3710ZGPbF
HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ ID = 59A
S
TO-220AB IRF3710ZGPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed
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