Datasheet4U Logo Datasheet4U.com

IRF9410PBF Power MOSFET

IRF9410PBF Description

www.DataSheet4U.com PD - 95260 IRF9410PbF l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gat.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF9410PBF Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

📥 Download Datasheet

Preview of IRF9410PBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRF9130 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9130SMD - P-Channel Power MOSFET (Seme LAB)
  • IRF9131 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9132 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9133 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9140 - P-Channel Power MOSFET (Seme LAB)
  • IRF9141 - (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
  • IRF9142 - (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)

📌 All Tags

Power MOSFET International Rectifier
International Rectifier IRF9410PBF-like datasheet