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IRFPC60LC-P - HEXFET Power MOSFET

IRFPC60LC-P Description

PD - 99438 HEXFET® Power MOSFET l l l l l l l IRFPC60LC-P D Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ci.
This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

IRFPC60LC-P Features

* 59 ) 4 1 5.9 0 (.6 26 ) 1 5.3 0 (.6 02 ) -B - 2X 5.50 (.2 1 7) 4.50 (.1 7 7) NO TE S: 1 DIM EN SION ING & TO LER AN CING P ER A N SI Y14.5M , 1982. 2 CON TR OLLIN G D IM EN SIO N : IN CH . 3 CON F OR M S TO JED E C OU TLIN E TO-247-A C . 2 .40 (.0 94 ) 2 .00 (.0 79 ) 2X 5.45 (.2 1 5) 2X 1 .4 0

IRFPC60LC-P Applications

* Surface Mountable TO-247 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage

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