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IRFU540ZPbF, IRFR540ZPbF HEXFET Power MOSFET

IRFU540ZPbF Description

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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRFU540ZPbF Applications

* G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Ther

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This datasheet PDF includes multiple part numbers: IRFU540ZPbF, IRFR540ZPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRFU540ZPbF, IRFR540ZPbF
Manufacturer
International Rectifier
File Size
350.61 KB
Datasheet
IRFR540ZPbF-InternationalRectifier.pdf
Description
HEXFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFU540ZPbF, IRFR540ZPbF.
Please refer to the document for exact specifications by model.

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📌 All Tags

HEXFET Power MOSFET International Rectifier
International Rectifier IRFU540ZPbF-like datasheet