* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high
2N120CND Datasheet (129.85 KB)
2N120CND
Intersil Corporation
129.85 KB
N-channel igbt.
HGTP2N120CND, HGT1S2N120CNDS
Data Sheet January 2000 File Number 4681.2
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
Th.
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