2N120CND Datasheet, Igbt, Intersil Corporation

PDF File Details

Part number:

2N120CND

Manufacturer:

Intersil Corporation

File Size:

129.85kb

Download:

📄 Datasheet

Description:

N-channel igbt.

TAGS

2N120CND

Intersil Corporation

📁 Related Datasheet

2N120 - 1200V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N120 2.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N120 provide excellent RDS(ON), low gate charge and ope.

2N120-E4 - 1200V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N120-E4 2.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N120-E4 provide excellent RDS(ON), low gate charge a.

2N1204 - PNP Transistor (Motorola)
A 2N 1204, (GERMANIUM) 2N1494,A 2N1495 2N 1496 2N2096 2N2097 2N2099 2N2100 PNP germanium epitaxial mesa transistors for highspeed, high-current swi.

2N1204A - PNP Transistor (Motorola)
A 2N 1204, (GERMANIUM) 2N1494,A 2N1495 2N 1496 2N2096 2N2097 2N2099 2N2100 PNP germanium epitaxial mesa transistors for highspeed, high-current swi.

2N1209 - NPN Transistor (SSDI)
5 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mh.

2N12 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N12 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-.

2N1212 - NPN Transistor (SSDI)
5 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mh.

2N123 - PNP Transistor (ETC)
.

2N1008 - PNP germanium transistor (Motorola)
2N1008, A, B(GERMANIUM) 2Nl008B JAN AVAILABLE CASE31(~,1)_~ (TO-5) All ,leads isolated PNP germanium transistor for audio driver and medium speed sw.

2N1008A - PNP germanium transistor (Motorola)
2N1008, A, B(GERMANIUM) 2Nl008B JAN AVAILABLE CASE31(~,1)_~ (TO-5) All ,leads isolated PNP germanium transistor for audio driver and medium speed sw.