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2N120CND Datasheet - Intersil Corporation

2N120CND N-Channel IGBT

2N120CND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high

2N120CND Datasheet (129.85 KB)

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Datasheet Details

Part number:

2N120CND

Manufacturer:

Intersil Corporation

File Size:

129.85 KB

Description:

N-channel igbt.

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2N120CND N-Channel IGBT Intersil Corporation

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