Datasheet Details
Part number:
2N120CND
Manufacturer:
Intersil Corporation
File Size:
129.85 KB
Description:
N-Channel IGBT
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high