Part number:
2N120
Manufacturer:
UTC
File Size:
498.10 KB
Description:
1200v n-channel power mosfet.
* RDS(ON) ≤ 7.5 Ω @ VGS=10V, ID=1.0A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
* SYMBOL Power MOSFET
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N120L-
2N120
UTC
498.10 KB
1200v n-channel power mosfet.
📁 Related Datasheet
2N12 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N12
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-.
2N120-E4 - 1200V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N120-E4
2.0A, 1200V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N120-E4 provide excellent RDS(ON), low gate charge a.
2N1204 - PNP Transistor
(Motorola)
A 2N 1204, (GERMANIUM)
2N1494,A
2N1495
2N 1496 2N2096 2N2097 2N2099 2N2100
PNP germanium epitaxial mesa transistors for highspeed, high-current swi.
2N1204A - PNP Transistor
(Motorola)
A 2N 1204, (GERMANIUM)
2N1494,A
2N1495
2N 1496 2N2096 2N2097 2N2099 2N2100
PNP germanium epitaxial mesa transistors for highspeed, high-current swi.
2N1209 - NPN Transistor
(SSDI)
5 AMP NPN
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mh.
2N120CND - N-Channel IGBT
(Intersil Corporation)
HGTP2N120CND, HGT1S2N120CNDS
Data Sheet January 2000 File Number 4681.2
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
Th.
2N1212 - NPN Transistor
(SSDI)
5 AMP NPN
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mh.
2N123 - PNP Transistor
(ETC)
.
