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FSPYE230R4 - N-Channel Power MOSFET

FSPYE230R4 Description

FSPYE230R, FSPYE230F TM Data Sheet May 2000 File Number 4852.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star *Power.

FSPYE230R4 Features

* 12A, 200V, rDS(ON) = 0.140Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Break

FSPYE230R4 Applications

* in a commercial or military space environment. Star
* Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star
* Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADs

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Datasheet Details

Part number
FSPYE230R4
Manufacturer
Intersil Corporation
File Size
83.75 KB
Datasheet
FSPYE230R4_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
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