FSPYE234D1 Datasheet - Intersil Corporation

FSPYE234D1 N-Channel Power MOSFET

FSPYE234R, FSPYE234F TM Data Sheet June 2000 File Number 4873 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star Power Rad Hard MOSFETs have been speciﬁcally developed for high performance applications in a commercial or military space environment. Star Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star Power FETs combine this electrical capability with total dose ra.

FSPYE234D1 Features

* 9A, 250V, rDS(ON) = 0.215Ω

* UIS Rated

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) - Rated to 300K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakd

FSPYE234D1 Datasheet (79.63 KB)

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Datasheet Details

Part number:

FSPYE234D1

Manufacturer:

Intersil Corporation

File Size:

79.63 KB

Description:

N-channel power mosfet.

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FSPYE234D1 N-Channel Power MOSFET Intersil Corporation

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