FSPYE234D1 - N-Channel Power MOSFET

Intersil Corporation

Datasheet Details

Part number	FSPYE234D1
Manufacturer	Intersil Corporation
File Size	79.63 KB
Description	N-Channel Power MOSFET
Datasheet	FSPYE234D1_IntersilCorporation.pdf

9A, 250V, rDS(ON) = 0.215Ω.
UIS Rated.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) - Rated to 300K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS.
Photo Current - 4.0nA Per-RAD (Si)/s Typi.

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Published: Mar 23, 2005 |