FSPYE234R N-Channel Power MOSFET

Intersil Corporation

Description

FSPYE234R, FSPYE234F TM Data Sheet June 2000 File Number 4873 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star *Power .

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Datasheet Specifications

Part number: FSPYE234R
Manufacturer: Intersil Corporation
File Size: 79.63 KB
Datasheet: FSPYE234R_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 9A, 250V, rDS(ON) = 0.215Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) - Rated to 300K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakd

Applications

* in a commercial or military space environment. Star
* Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star
* Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADs

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FSPYE234R N-Channel Power MOSFET Intersil Corporation

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