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FSPYE234F4 N-Channel Power MOSFET

FSPYE234F4 Description

FSPYE234R, FSPYE234F TM Data Sheet June 2000 File Number 4873 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star *Power .

FSPYE234F4 Features

* 9A, 250V, rDS(ON) = 0.215Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakd

FSPYE234F4 Applications

* in a commercial or military space environment. Star
* Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star
* Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADs

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Datasheet Details

Part number
FSPYE234F4
Manufacturer
Intersil Corporation
File Size
79.63 KB
Datasheet
FSPYE234F4_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation FSPYE234F4-like datasheet