FSS130D Datasheet - Intersil Corporation

N-Channel Power MOSFET

FSS130D Features

* 11A, 100V, rDS(ON) = 0.210Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Ra

FSS130D General Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RA.

FSS130D Datasheet (45.08 KB)

FSS130D Datasheet Preview — Preview of FSS130D PDF

Datasheet Details

Part number:

FSS130D

Manufacturer:

Intersil Corporation

File Size:

45.08 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

FSS130R N-Channel Power MOSFET (Intersil Corporation)

FSS131 P-Channel Silicon MOSFET (Sanyo Semicon Device)

FSS132 Load Switching Applications (Sanyo Semicon Device)

FSS133 P-Channel Silicon MOSFET (Sanyo Semicon Device)

FSS134 DC/DC Converter Applications (Sanyo Semicon Device)

FSS138 P-Channel Silicon MOSFET (Sanyo Semicon Device)

FSS139 Load Switching Applications (Sanyo Semicon Device)

FSS13A0D N-Channel Power MOSFETs (Intersil Corporation)

FSS13A0R N-Channel Power MOSFETs (Intersil Corporation)

FSS101 P-Channel Silicon MOSFET (Sanyo Semicon Device)

TAGS

FSS130D N-Channel Power MOSFET Intersil Corporation

Image Gallery

FSS130D Features

FSS130D General Description

Datasheet Details

File Size:

Description:

FSS130D Distributor