FSS101 - P-Channel Silicon MOSFET

Datasheet Summary

Features

Low ON resistance.
Ultrahigh-speed switching.
2.5V drive. P-Channel Silicon MOSFET FSS101 Load S/W.

Sanyo Semicon Device

📥 Download Datasheet

Datasheet Details

Part number	FSS101
Manufacturer	Sanyo Semicon Device
File Size	114.10 KB
Description	P-Channel Silicon MOSFET
Datasheet	FSS101 Datasheet
Additional preview pages of the FSS101 datasheet.

📁 Similar Datasheet

FSS130D - N-Channel Power MOSFET (Intersil Corporation)
FSS130R - N-Channel Power MOSFET (Intersil Corporation)
FSS13A0D - N-Channel Power MOSFETs (Intersil Corporation)
FSS13A0R - N-Channel Power MOSFETs (Intersil Corporation)
FSS145 - P-Channel Silicon MOSFET (Sanyo)
FSS174 - P-Channel Silicon MOSFET (Sanyo)
FSS174-TL-E - P-Channel 30V MOSFET (VBsemi)
FSS230D - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs (Intersil Corporation)
FSS230R - N-Channel Power MOSFETs (Intersil Corporation)
FSS234 - N-Channel Silicon MOSFET (Sanyo)

Other Datasheets by Sanyo Semicon Device

FSS104 - DC/DC Converter Applications
FSS106 - P-Channel Silicon MOSFET
FSS107 - P-Channel Silicon MOSFET
FSS131 - P-Channel Silicon MOSFET
FSS132 - Load Switching Applications
FSS133 - P-Channel Silicon MOSFET
FSS134 - DC/DC Converter Applications
FSS138 - P-Channel Silicon MOSFET

Full PDF Text Transcription

Click to expand full text

Ordering number:ENN5984A Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. P-Channel Silicon MOSFET FSS101 Load S/W Applications Package Dimensions unit:mm 2116 [FSS101] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C 0.595 1.27 0.43 Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.

Published: Mar 23, 2005 |