Datasheet4U Logo Datasheet4U.com

FSS174 - P-Channel Silicon MOSFET

Datasheet Summary

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings Unit --30 V ±20 V --6 A --24 A 1.6 W 150 °C --55 to +150.

📥 Download Datasheet

Datasheet preview – FSS174

Datasheet Details

Part number FSS174
Manufacturer Sanyo
File Size 34.80 KB
Description P-Channel Silicon MOSFET
Datasheet download datasheet FSS174 Datasheet
Additional preview pages of the FSS174 datasheet.

📁 Similar Datasheet

  • FSS174-TL-E - P-Channel 30V MOSFET (VBsemi)
  • FSS101 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS104 - DC/DC Converter Applications (Sanyo Semicon Device)
  • FSS106 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS107 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS130D - N-Channel Power MOSFET (Intersil Corporation)
  • FSS130R - N-Channel Power MOSFET (Intersil Corporation)
  • FSS131 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS132 - Load Switching Applications (Sanyo Semicon Device)
  • FSS133 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
Other Datasheets by Sanyo
  • FSS145 - P-Channel Silicon MOSFET
  • FSS234 - N-Channel Silicon MOSFET
  • FSS264 - N-Channel Silicon MOSFET
  • FSS273 - N-Channel Silicon MOSFET
  • FSS275 - N-Channel Silicon MOSFET
  • FSS804 - N-Channel Silicon MOSFET

Full PDF Text Transcription

Click to expand full text
Ordering number : EN8738 FSS174 SANYO Semiconductors DATA SHEET FSS174 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings Unit --30 V ±20 V --6 A --24 A 1.
Published: |