FSYC360R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Intersil Corporation

Description

FSYC360D, FSYC360R Data Sheet February 2000 File Number 4791 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operati.

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Datasheet Specifications

Part number: FSYC360R
Manufacturer: Intersil Corporation
File Size: 77.16 KB
Datasheet: FSYC360R_IntersilCorporation.pdf
Description: Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Features

* 21A, 400V, rDS(ON) = 0.210Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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FSYC360R Radiation Hardened SEGR Resistant N-Channel Power MOSFETs Intersil Corporation

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