* 21A, 400V, rDS(ON) = 0.210Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra
FSYC360R
Intersil Corporation
77.16 KB
Radiation hardened/ segr resistant n-channel power mosfets.
FSYC360D, FSYC360R
Data Sheet February 2000 File Number 4791
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operati.
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