* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >10 1
HCTS21MS Datasheet (148.42 KB)
HCTS21MS
Intersil Corporation
148.42 KB
Radiation hardened dual 4-input and gate.
HCTS21MS October 1995 Radiation Hardened Dual 4-Input AND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T14.
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