* 3 Micron Radiation Hardened CMOS SOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >1010
HCTS273MS Datasheet (474.55 KB)
HCTS273MS
Intersil Corporation
474.55 KB
Radiation hardened octal d flip-flop.
HCTS273MS September 1995 Radiation Hardened Octal D Flip-Flop Pinouts 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20,.
📁 Related Datasheet
HCTS27MS Radiation Hardened Triple 3-Input NOR Gate (Intersil Corporation)
HCTS20MS Radiation Hardened Dual 4-Input NAND Gate (Intersil)
HCTS21MS Radiation Hardened Dual 4-Input AND Gate (Intersil Corporation)
HCTS240AMS Radiation Hardened Octal Buffer/Line Driver/ Three-State (Intersil Corporation)
HCTS244MS Radiation Hardened Octal Buffer/Line Driver (Intersil Corporation)
HCTS244T Radiation Hardened Octal Buffer/Line Driver/ Three-State (Intersil Corporation)
HCTS245MS Radiation Hardened Octal Bus Transceiver (Intersil Corporation)
HCTS245T Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting (Intersil Corporation)
HCTS299MS Radiation Hardened 8-Bit Universal Shift Register (Intersil Corporation)
HCTS00MS Radiation Hardened Quad 2-Input NAND Gate (Intersil Corporation)
