HP4410DY Datasheet - Intersil Corporation

HP4410DY N-Channel Power MOSFET

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HP4410DY Data Sheet August 1999 File Number 4468.4 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications wh.

HP4410DY Features

* Logic Level Gate Drive

* 10A, 30V

* rDS(ON) = 0.0135Ω at ID = 10A, VGS = 10V

* rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V

* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information PART NUMBER HP

HP4410DY Datasheet (82.35 KB)