IRFP360 Datasheet (Intersil Corporation)

IRFP360, N-Channel Power MOSFET

www.DataSheet4U.com IRFP360 Data Sheet July 1999 File Number 2290.3 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching tran

IRFP360 Features

* 23A, 400V

* rDS(ON) = 0.200Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for