IRFP350 Datasheet - Intersil Corporation

IRFP350 N-Channel Power MOSFET

www.DataSheet4U.com IRFP350 Data Sheet July 1999 File Number 2319.4 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high powe.

IRFP350 Features

* 16A, 400V

* rDS(ON) = 0.300Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFP350_IntersilCorporation.pdf

IRFP350 Datasheet Preview — Preview of IRFP350 PDF

Datasheet Details

Part number:

IRFP350

Manufacturer:

Intersil Corporation

File Size:

217.32 KB

Description:

N-channel power mosfet.

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IRFP350 IRFP350 N-Channel Power MOSFET Intersil Corporation

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