IRFP352R
Inchange Semiconductor
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N-channel mosfet transistor. *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE
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IRFP352 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
.
IRFP352 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~
FIELD EFFECT POVVER TRANSISTOR
IRFP352,353
13 AMPERES 400, 350 VOLTS ROS(ON) = 0.4 il
This series of N-Channel Enhancement-mode Power MOSFETs u.
IRFP350 - N-Channel MOSFET Transistor
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isc N-Channel MOSFET ransistor
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: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
:.
IRFP350 - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRFP350
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFP350 - Power MOSFET
(International Rectifier)
.
IRFP350 - N-Channel Power MOSFET
(Intersil Corporation)
..
IRFP350
Data Sheet July 1999 File Number
2319.4
16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode sil.
IRFP350 - Power MOSFET
(Vishay)
Power MOSFET
IRFP350, SiHFP350
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
400 VGS = 10 V
150
Qgs (nC)
23
Qgd (nC)
80
.
IRFP350A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
.
IRFP350A - Advanced Power MOSFET
(Fairchild Semiconductor)
..
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved .
IRFP350FI - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP350FI
FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Vo.