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IRFP353

FIELD EFFECT POWER TRANSISTOR

IRFP353 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching -Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFP353 Datasheet (186.97 KB)

Preview of IRFP353 PDF

Datasheet Details

Part number:

IRFP353

Manufacturer:

GE

File Size:

186.97 KB

Description:

Field effect power transistor.
~D~~ FIELD EFFECT POVVER TRANSISTOR IRFP352,353 13 AMPERES 400, 350 VOLTS ROS(ON) = 0.4 il This series of N-Channel Enhancement-mode Power MOSFETs u.

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IRFP353 FIELD EFFECT POWER TRANSISTOR GE

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