* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRF642
GE
202.11 KB
Field effect power transistor.
~[R1D~LP~
FIELD EFFECT POWER TRANSISTOR
IRF642,643
16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D.
This series of N-Channel Enhancement-mode Power MOSFET.
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