Datasheet4U.com

IRF642 - FIELD EFFECT POWER TRANSISTOR

GE

📥 Download Datasheet

IRF642 Datasheet Preview — Preview of IRF642 PDF

datasheet Preview Page 2

Datasheet Details

Part number	IRF642
Manufacturer	GE
File Size	202.11 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRF642-GE.pdf

IRF642 Product details

Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

📁 IRF642 Similar Datasheet

IRF640 - N-channel TrenchMOS transistor (NXP)
IRF640A - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF640B - 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF640FI - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF640FP - N-Channel MOSFET (STMicroelectronics)
IRF640L - Power MOSFET (International Rectifier)
IRF640N - Power MOSFET (International Rectifier)
IRF640NL - Power MOSFET (International Rectifier)

Other Datasheets by GE

IRF643 - FIELD EFFECT POWER TRANSISTOR
IRF612 - FIELD EFFECT POWER TRANSISTOR
IRF613 - FIELD EFFECT POWER TRANSISTOR
IRF632 - FIELD EFFECT POWER TRANSISTOR
IRF633 - FIELD EFFECT POWER TRANSISTOR
IRF712 - FIELD EFFECT POWER TRANSISTOR

Published: Feb 9, 2019 |