IRF642 Datasheet - GE

IRF642 FIELD EFFECT POWER TRANSISTOR

~[R1D~LP~ FIELD EFFECT POWER TRANSISTOR IRF642,643 16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D. This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with go.

IRF642 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRF642 Datasheet (202.11 KB)

IRF642 Datasheet Preview — Preview of IRF642 PDF

Datasheet Details

Part number:

IRF642

Manufacturer:

File Size:

202.11 KB

Description:

Field effect power transistor.

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IRF642 FIELD EFFECT POWER TRANSISTOR GE

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