IRF642 FIELD EFFECT POWER TRANSISTOR

Description

~[R1D~LP~ FIELD EFFECT POWER TRANSISTOR IRF642,643 16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D.This series of N-Channel Enhancement-mode Power MOSFET.

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Datasheet Specifications

Part number: IRF642
Manufacturer: GE
File Size: 202.11 KB
Datasheet: IRF642-GE.pdf
Description: FIELD EFFECT POWER TRANSISTOR

Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

IRF642 Distributors

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IRF642 FIELD EFFECT POWER TRANSISTOR GE

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