IRF642 Datasheet (GE) - FIELD EFFECT POWER TRANSISTOR

IRF642, FIELD EFFECT POWER TRANSISTOR

~[R1D~LP~ FIELD EFFECT POWER TRANSISTOR IRF642,643 16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D.

This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area with go

IRF642 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement