* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRF712
GE
194.79 KB
Field effect power transistor.
~[gjD~[
*i~
FIELD EFFECT POVVER TRANSISTOR
IRF712,713
1.3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n
This series of N-Channel Enhancement-mode Power MO.
📁 Related Datasheet
IRF710 N-Channel Power MOSFET (Intersil Corporation)
IRF710 N-Channel MOSFET (INCHANGE)
IRF710 N-Channel MOSFET (ART CHIP)
IRF710 Power MOSFET (Vishay)
IRF7101 Power MOSFET (International Rectifier)
IRF7101PBF Power MOSFET (International Rectifier)
IRF7102 Power MOSFET (International Rectifier)
IRF7103 Power MOSFET (International Rectifier)
IRF7103PBF Power MOSFET (International Rectifier)
IRF7103Q Power MOSFET (International Rectifier)
