* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRF713
GE
194.79 KB
Field effect power transistor.
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FIELD EFFECT POVVER TRANSISTOR
IRF712,713
1.3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n
This series of N-Channel Enhancement-mode Power MO.
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