IRF713 Datasheet - GE

IRF713 FIELD EFFECT POWER TRANSISTOR

~[gjD~[ i~ FIELD EFFECT POVVER TRANSISTOR IRF712,713 1.3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area wit.

IRF713 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRF713 Datasheet (194.79 KB)

IRF713 Datasheet Preview — Preview of IRF713 PDF

Datasheet Details

Part number:

IRF713

Manufacturer:

File Size:

194.79 KB

Description:

Field effect power transistor.

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IRF713 FIELD EFFECT POWER TRANSISTOR GE

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