IRF743 Datasheet - GE

IRF743 FIELD EFFECT POWER TRANSISTOR

~D~[F~lf FIELD EFFECT POWER TRANSISTOR IRF742,743 SAMPERES 400, 350 VOLTS ROS(ON) =O.SO n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good l.

IRF743 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRF743 Datasheet (194.99 KB)

IRF743 Datasheet Preview — Preview of IRF743 PDF

Datasheet Details

Part number:

IRF743

Manufacturer:

File Size:

194.99 KB

Description:

Field effect power transistor.

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IRF743 FIELD EFFECT POWER TRANSISTOR GE

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