* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRF743
GE
194.99 KB
Field effect power transistor.
~D~[F~lf
FIELD EFFECT POWER TRANSISTOR
IRF742,743
SAMPERES 400, 350 VOLTS
ROS(ON) =O.SO n
This series of N-Channel Enhancement-mode Power MOSFETs ut.
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