* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRF632
GE
195.29 KB
Field effect power transistor.
~D~[F~lr
FIELD EFFECT POWER TRANSISTOR
IRF632,633
8.0 AMPERES 200, 150 VOLTS ROS(ON) ::: 0.6 0.
This series of N-Channel Enhancement-mode Power MOSF.
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