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IRF632 FIELD EFFECT POWER TRANSISTOR

IRF632 Description

~D~[F~lr FIELD EFFECT POWER TRANSISTOR IRF632,633 8.0 AMPERES 200, 150 VOLTS ROS(ON) ::: 0.6 0.This series of N-Channel Enhancement-mode Power MOSF.

IRF632 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

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Datasheet Details

Part number
IRF632
Manufacturer
GE
File Size
195.29 KB
Datasheet
IRF632-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

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FIELD EFFECT POWER TRANSISTOR GE
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