IRF632 Datasheet (GE) - FIELD EFFECT POWER TRANSISTOR

IRF632, FIELD EFFECT POWER TRANSISTOR

~D~[F~lr FIELD EFFECT POWER TRANSISTOR IRF632,633 8.0 AMPERES 200, 150 VOLTS ROS(ON) ::: 0.6 0.

This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area with

IRF632 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement