IRF632 Datasheet - GE

IRF632 FIELD EFFECT POWER TRANSISTOR

~D~[F~lr FIELD EFFECT POWER TRANSISTOR IRF632,633 8.0 AMPERES 200, 150 VOLTS ROS(ON) ::: 0.6 0. This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with .

IRF632 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRF632 Datasheet (195.29 KB)

IRF632 Datasheet Preview — Preview of IRF632 PDF

Datasheet Details

Part number:

IRF632

Manufacturer:

File Size:

195.29 KB

Description:

Field effect power transistor.

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IRF632 FIELD EFFECT POWER TRANSISTOR GE

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