IRF632 FIELD EFFECT POWER TRANSISTOR

Description

~D~[F~lr FIELD EFFECT POWER TRANSISTOR IRF632,633 8.0 AMPERES 200, 150 VOLTS ROS(ON) ::: 0.6 0.This series of N-Channel Enhancement-mode Power MOSF.

📥 Download Datasheet

IRF632 Datasheet Preview — Preview of IRF632 PDF

Datasheet Specifications

Part number: IRF632
Manufacturer: GE
File Size: 195.29 KB
Datasheet: IRF632-GE.pdf
Description: FIELD EFFECT POWER TRANSISTOR

Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

IRF632 Distributors

📁 Related Datasheet

IRF630 IRF630A IRF630B IRF630F IRF630FI IRF630FP

📌 All Tags

IRF632 FIELD EFFECT POWER TRANSISTOR GE

GE IRF632-like datasheet