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IRF643, IRF642 FIELD EFFECT POWER TRANSISTOR

IRF643 Description

~[R1D~LP~ FIELD EFFECT POWER TRANSISTOR IRF642,643 16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D.This series of N-Channel Enhancement-mode Power MOSFET.

IRF643 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRF643, IRF642. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF643, IRF642
Manufacturer
GE
File Size
202.11 KB
Datasheet
IRF642-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRF643, IRF642.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

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FIELD EFFECT POWER TRANSISTOR GE
GE IRF643-like datasheet