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IRF633

FIELD EFFECT POWER TRANSISTOR

IRF633 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRF633 Datasheet (195.29 KB)

Preview of IRF633 PDF

Datasheet Details

Part number:

IRF633

Manufacturer:

GE

File Size:

195.29 KB

Description:

Field effect power transistor.
~D~[F~lr FIELD EFFECT POWER TRANSISTOR IRF632,633 8.0 AMPERES 200, 150 VOLTS ROS(ON) ::: 0.6 0. This series of N-Channel Enhancement-mode Power MOSF.

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TAGS

IRF633 FIELD EFFECT POWER TRANSISTOR GE

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