* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRF613
GE
190.89 KB
Field effect power transistor.
DO D[]~[F~
FIELD EFFECT POWER TRANSISTOR
IRF612,613
2.0 AMPERES 200, 150 VOLTS
ROS(ON) = 2.4 n
This series of N-Channel Enhancement-mode Power MOSFE.
📁 Related Datasheet
IRF610 N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF610 N-Channel Power MOSFET (Intersil Corporation)
IRF610 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF610 Power MOSFET (Vishay)
IRF6100 HEXFET Power MOSFET (International Rectifier)
IRF6100PBF HEXFET Power MOSFET (International Rectifier)
IRF610A N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF610A Advanced Power MOSFET (Fairchild Semiconductor)
IRF610B 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF610L Power MOSFET (Vishay)
