Part number:
IRFP352
Manufacturer:
GE
File Size:
186.97 KB
Description:
Field effect power transistor.
IRFP352 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching -Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
Datasheet Details
IRFP352
GE
186.97 KB
Field effect power transistor.
📁 Related Datasheet
IRFP350 N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFP350 Power MOSFET (Fairchild Semiconductor)
IRFP350 Power MOSFET (International Rectifier)
IRFP350 N-Channel Power MOSFET (Intersil Corporation)
IRFP350 Power MOSFET (Vishay)
IRFP350A N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFP350A Advanced Power MOSFET (Fairchild Semiconductor)
IRFP350FI N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFP352 Distributor