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IRFP352 - FIELD EFFECT POWER TRANSISTOR

IRFP352 Description

~D~~ FIELD EFFECT POVVER TRANSISTOR IRFP352,353 13 AMPERES 400, 350 VOLTS ROS(ON) = 0.4 il This series of N-Channel Enhancement-mode Power MOSFETs u.

IRFP352 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching -Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

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Datasheet Details

Part number
IRFP352
Manufacturer
GE
File Size
186.97 KB
Datasheet
IRFP352-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

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FIELD EFFECT POWER TRANSISTOR GE
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