IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
These advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching tran
IRFU110 Features
* 4.7A, 100V
* rDS(ON) = 0.540Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* 175oC Operating Temperature
* Rela
IRFR110_IntersilCorporation.pdf
Datasheet Details
IRFU110, IRFR110
Intersil Corporation
60.04 KB
N-channel power mosfets.
This datasheet PDF includes multiple part numbers: IRFU110, IRFR110.
Please refer to the document for exact specifications by model.
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